EndStations
Ion implantation of substrates such as semiconductor wafers takes place in so-called end stations or implanter stations.
These consist mainly of the following modules:
Implantationskammer / Implanter.Module:
Vacuum chamber, WaferScanner, WaferChuck, Tilt- und Twist- kinematics, beam apertures,
dose measurement (Faraday-Cups), beam calibration, shielding, vacuum system, safety
WaferHandling.Module / Substrate.Handling:
central robot vacuum chamber, HandlingRobot, gatevalves, LoadLock,
Heating, Cooling, Alignment, WaferMagazine, ID.Reader
BeamLine.Interface:
Interface to customers beam guide and beam shaping system,
contains also vacuum- and cryo system, beam/radiation measurement technology.
The BeamLine is usually connected with customers accelerator and ion source system.
Together, these components form a so-called EndStation for the Ion Implantation of wafers (Si, SiC, GaN, …), which is used in the semiconductor industry for doping substrates to produce the desired semiconductor effect, optimize the properties of semiconductor structures, and much more.
Implanter.Module
Ion implantation is used in the semiconductor industry to implant (dope) different types of ions with different energies into substrates such as wafers (for doping, creating of planned shortcuts, improve properties, etc.).
This enables targeted changes to the properties of the base material and/or the layers that have already been applied.
Adenso offers customer-specific implanter modules (IMP) as part of the modular VAC.ROBOTICS platform – which enables customers to set up new EndStations / implanter systems and apply and develop new ion implantation technologies quickly and easily.
For new ion implantation processes such as superjunction technologies for SiC (silicon carbide) MOSFETS up to 3.3kV, the compact implanter modules from Adenso, which have already been proven in industrial series production, are ideally suited for high volume manufacuring, especially in conjunction with the Substrate Scanner Solutions for precise scanning movements of the SiC substrates/wafers in the ion beam.
A key selling point of Adenso´s implanter modules is that they are available with DUAL.SCAN kinematics, enabling the loading of various substates and/or achieving maximum throughput.
eChuck systems (electrostatic substate holders) enable flexible wafer clamping even in cases of significant wafer bow.
A wide variety of TILT- and TWIST- meachnisms are available as options to optimally align the wafers for the respective implantation processes.
Supplemented with a heating chuck up to 1.000°C, there is a significant increase in throughput.
Further options include a wide range of beam controls, calibration equipment and measurement technology. In many cases (e.g. with SiC MOSFETS) these enable the reduction to fewer implantation stages, which means significant cost savings and increased throughput.
Applications for such silicon-carbide based MOSFETS on SiC superjunction technology are diverse: automotive drivetrains, EV charging, solar energy systems, energy storage, high-power traction inverters etc.
The WHM-IMP.Module is designed for substrate dimensions of up to 350mm (round/square), on which wafer sizes of 200/150/100/75/50/25mm also can be processed.
Direct substrate handling as well as carrier solutions are available for all substrate sizes and dimensions (round, rectangular, special)
- flexible, customer-specific configuration, based on industrial-prooved solutions
- fast commissioning based on modular hardware and software concept
- integration of customers ion implantation technologies and measurement equipment
SSS SubstrateScanner.Solutions
The following special features are particularly valued by Adenso.Implanting customers
- vertical.scanner – for fast and high precise substrate movements, in case the ion beam can only be formed in one dimension
- DUAL.SCAN Solution – comes with two scanning modules – for highest thruput and/or filter/substrate combinations
- active-/passive-substratt – beam filter technology
- heat/cool – chuck systems available (up to 1.000°C)
The Adenso Scanner.Solutions are ideal for processing SiC wafers (silicon carbide), especially in combination with the heating chuck up to 1,000°C
New technologies such as SiC superjunction for SiC MOSFETS can be precisely processed and further developed on industrially proven Adenso solutions.