As the adoption of silicon carbide (SiC) power semiconductors continues to grow, the demands on advanced ion implantation processes are increasing accordingly. In particular, superjunction technologies for SiC MOSFETs up to 3.3 kV require manufacturing solutions that combine high precision with cost-effective high-volume production. <\/p>\n\n
For these applications, Adenso\u2019s compact implanter modules<\/strong> provide an ideal solution. Proven in industrial mass production, these systems have been specifically designed to meet the requirements of high-volume manufacturing and enable the reliable implementation of demanding ion implantation processes on SiC substrates. <\/p>\n\n A key success factor is the combination with Adenso\u2019s SSS SubstrateScanner Solutions<\/strong>. These systems ensure precise scanning movements of SiC substrates and wafers within the ion beam, providing the basis for accurate and highly reproducible process control. <\/p>\n\n In addition, the implanter systems can be equipped with a heating chuck capable of temperatures up to 1,000 \u00b0C<\/strong>. This enables significant throughput improvements and increases the economic efficiency of high-volume SiC substrate manufacturing. <\/p>\n\n With its modular and industry-proven solutions, Adenso supports the advancement of innovative SiC devices and helps manufacturers meet the requirements of future high-performance power electronics applications with confidence and reliability.<\/p>\n\n Further Information:<\/strong><\/p>\n\n Implanter Modules:<\/strong> https:\/\/adenso.solutions\/vac-robotics\/ion-implantation\/#implant<\/a><\/p>\n\n